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混合金刚石芯片增强光与量子比特的相互作用

Hybrid diamond chip strengthens interactions between light and quantum bits

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研究人员开发并演示GaP-on-diamond混合纳米光子平台,实现光子与金刚石硅空位(SiV)中心的可控相互作用。团队通过印章转移在金刚石衬底上制成600多个纳米光子腔,良率为99.5%,并获得高于1的协同性和超过0.4毫秒的自旋弛豫时间,实现SiV电子自旋单次读出。后续计划在同一芯片连接多个器件并演示纠缠。

推荐理由

不刻蚀金刚石的转移工艺兼顾器件良率与自旋光子耦合,为理解量子网络接口如何走向可扩展制造提供了具体案例。

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Illustration showing GaP-on-diamond devices
Researchers have shown that their new hybrid-integrated GaP-on-diamond nanophotonic platform can produce reliably controlled interactions between photons and silicon-vacancy (SiV) centers in diamonds. Credit: Nicholas S. Yama, University of Washington

Researchers have developed and demonstrated a new hybrid photonic platform that integrates quantum emitters with photonic devices, providing a way to reliably control the interaction between photons and quantum information carriers. The chip-based platform, which combines gallium phosphide (GaP) with a diamond substrate, could help make quantum networks more practical by providing a way to connect quantum devices over long distances.

Scaling up quantum technology to create communication networks requires connecting quantum memories, or qubits, over long distances. Although fiber-optic networks offer a promising way to do this using optical signals, a key challenge is reliably converting information stored in qubits into optical photons that can travel through the network.

"We show that our hybrid-integrated GaP-on-diamond nanophotonic platform can address this challenge by realizing reliably controlled interactions between photons and a type of qubit called a silicon-vacancy (SiV) center in diamond," said the paper's first author, Nicholas S. Yama from the University of Washington. "GaP also has strong nonlinear properties that enable optical frequency conversion, switching and modulation, all of which are needed for networking applications."

In the journal Optica Quantum, researchers led by Kai-Mei C. Fu from Washington University and Pacific Northwest National Laboratory describe their new hybrid platform, including a scalable fabrication process they developed to address a longstanding challenge in producing diamond-based photonic devices. They used this process to fabricate more than 600 GaP nanophotonic cavities on a diamond substrate with a 99.5% yield.

"If GaP-on-diamond proves to be a viable path forward, it could be among the most straightforward paths to realizing quantum networks at scale for practical applications such as secure communications and cryptography," said Yama. "The same technology could also support broader quantum computing applications, while the ability to create quantum systems spanning large distances could open up possibilities well beyond networking."

GaP on diamond chips
Two different 2-mm diamond chips with stamped GaP devices are glued to the cold finger of a cryostat to be cooled to 4 K. Sixteen sets of 40 nanophotonic cavities are arrayed over each chip. Credit: Nicholas S. Yama, University of Washington

Overcoming the separation challenge

GaP-on-diamond has been studied for more than a decade as a potential scalable platform for diamond-based qubits. However, getting the photonic devices and SiV centers to interact strongly enough to reliably control the qubits has proven difficult. This requires a regime known as high cooperativity, in which the interaction is strong enough to produce deterministic behavior.

"Until now, it has been difficult to achieve high cooperativity with GaP-on-diamond because the GaP photonic layer was spatially separated from the SiV centers in the diamond," said Yama. "Early devices used partial etching of the diamond to mitigate this, but because this process is nonstandard, it is difficult to scale up using established fabrication methods."

In 2023, Fu's group showed that they could fabricate GaP-on-diamond devices without modifying the diamond by using a scalable stamp-transfer process. However, the optical interactions were not strong enough for practical use. In the new work, they went back to the drawing board and redesigned the structure to improve the performance while also perfecting the fabrication process.

Nanophotonic cavities
The new platform was made possible by a scalable fabrication process the researchers developed. They used the fabrication process to make more than 600 GaP nanophotonic cavities (pictured) on a diamond substrate with a 99.5% yield. Credit: Nicholas S. Yama, University of Washington

Through several iterations, they improved the stamp transfer process yield to nearly 100%. They also integrated the physical separation of the SiV and photonics into the design optimization process, which made it possible to greatly enhance the interaction without sacrificing other aspects of the device.

The new platform combines the strengths of two materials. While unetched diamond provides a pristine host for the strong SiV-photon interaction needed to transfer quantum information, GaP enables optical components such as switches and modulators to be integrated directly into the chip.

"Our GaP-on-diamond platform could eventually be used to connect multiple SiV qubits on a single chip to integrate switching, modulation and waveguides alongside SiV qubits rather than relying on separate external components," said Yama. "In this work, we demonstrate that the key fundamental component—the SiV-photon coupling—works, which could enable these larger networking chips in the future."

Testing the new platform

To demonstrate the devices, the researchers started with a GaP membrane grown on a carrier substrate. They then patterned the nanophotonic cavity devices into the membrane using an electron-beam lithography process and tested their performance with optical spectroscopy to ensure that they had the right properties. They selected the best sets of devices and transferred those to the diamond substrate via the stamp transfer process they developed.

Using a laser, they were able to show that the devices achieved above-unity cooperativity, meaning the interaction was strong enough for the SiV spin state to be reliably detected through the light scattered from the device. Each spin state produced a distinct spectral signature, allowing the researchers to "watch" the SiV qubit switch between states. The devices also had spin-relaxation times exceeding 0.4 milliseconds, which, together with the high cooperativity, enabled single-shot readout of the SiV electron spin.

Next, the researchers would like to connect two or more GaP-on-diamond SiV devices on the same chip and show that they can be entangled with each other to form a larger quantum register. They also plan to further optimize the fabrication process, which would improve cooperativity values while also enabling the creation of more complex integrated photonic chip layouts.

The hybrid integration approach could likely be used for applications beyond SiV centers and diamond. For example, qubits that are difficult to integrate with traditional all-diamond photonics could potentially be combined with GaP-on-diamond. Similar approaches could also be adapted to other quantum emitter platforms, such as silicon carbide and single emitters in 2D materials, providing new tools for scaling quantum technologies.

More information

Nicholas S. Yama et al., Efficient spin-photon interactions in a scalable nanophotonic platform, Optica Quantum (2026). DOI: 10.1364/opticaq.607235

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Citation: Hybrid diamond chip strengthens interactions between light and quantum bits (2026, October 18) retrieved 18 October 2026 from https://phys.org/news/2026-10-hybrid-diamond-chip-interactions-quantum.html

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