SIOM and Partners Make Progress in Low-Threshold Red Halide Perovskite Single-Mode Lasers
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SIOM and the Hangzhou Institute for Advanced Study of the University of Chinese Academy of Sciences achieved red perovskite single-mode lasing at 660 nm at room temperature in air. The team introduced the PEATFA additive into CsPbBrI2 films, improving defects and carrier recombination through electron-cloud redistribution and raising the carrier lifetime from 2.38 ns to 7.12 ns.
The study uses additives to tune electron-cloud distribution, combining defect passivation with carrier-dynamics optimization and providing a materials-processing approach to lowering the threshold of red perovskite lasers.
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Source: Shanghai Institute of Optics and Fine Mechanics (SIOM) · Research Updates · siom.cas.cn