SIOM and Others Find Nonlinear Effects in Chips Under High-Current Proton Irradiation
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The Shanghai Institute of Optics and Fine Mechanics, together with the Institute of Microelectronics of the Chinese Academy of Sciences and ShanghaiTech University, studied the effects of nanosecond high-current laser-driven proton beam irradiation on chips and found that the beam can enhance bit-flip effects in SRAM chips. The experiment produced a proton beam with a central energy of about 8 MeV and a pulse width of 2.3 ns. Bit-flip cross sections for 130 nm and 180 nm SOI process chips were 2.2-3.8 times higher than in conventional low-flux accelerator tests. Combined Geant4 and TCAD simulations revealed a time-stacking enhancement mechanism from continuous proton charge deposition. The results were published in Applied Physics Reviews.
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- Shanghai Institute of Optics and Fine Mechanics (SIOM) · Research UpdatesPicksSIOM and Partners Make Progress in Chip Effects Under Nanosecond High-Current Laser Proton Beam Irradiation
SIOM, the Institute of Microelectronics of the Chinese Academy of Sciences, and ShanghaiTech University found that nanosecond high-current laser proton beams can enhance bit-flip effects in SRAM chips. The experiment produced a proton beam with a central energy of about 8 MeV and a pulse width of 2.3 ns. Bit-flip cross sections of 130 nm and 180 nm SOI-process chips were 2.2 to 3.8 times higher than those measured in low-flux tests with conventional accelerators. Combined Geant4 and TCAD simulations revealed the temporal-buildup enhancement mechanism from continuous proton charge deposition. The results were published in Applied Physics Reviews.
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